SILICON AS A RESIDUAL DONOR IN HIGH-PURITY GAAS

被引：27

作者：

WOLFE, CM ^{[1
]}

KORN, DM ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] MIT, LINCOLN LAB, LEXINGTON, MA 02173 USA

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 02期

关键词：

D O I：

10.1063/1.1655102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：78 / 80

页数：3

相关论文

共 38 条

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[8] ANALYSIS OF IMPURITY DISTRIBUTION IN HOMOEPITAXIAL N ON N+ FILMS OF GAAS WHICH CONTAIN HIGH-RESISTIVITY REGIONS
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[9] EDDOLLS DV, 1967, 1966 S P I PHYS PHYS, P3
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