ANALYSIS OF IMPURITY DISTRIBUTION IN HOMOEPITAXIAL N ON N+ FILMS OF GAAS WHICH CONTAIN HIGH-RESISTIVITY REGIONS

被引：33

作者：

DILORENZO, JV

MARCUS, RB

LEWIS, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 02期

关键词：

D O I：

10.1063/1.1660088

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：729 / +

页数：1

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[1] BLAKESLEE AE, 1969, 10550F EC REP
[2] CAIRNS B, 1970, ELECTROCHEM SOC M LO
[3] REACTIONS OF GALLIUM WITH QUARTZ AND WITH WATER VAPOR, WITH IMPLICATIONS IN THE SYNTHESIS OF GALLIUM ARSENIDE
COCHRAN, CN
FOSTER, LM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) : 149 - 154
[4] A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS
COPELAND, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) : 445 - &
[5] COX RH, 1970, ELECTROCHEM SOC M LO
[6] DAWSON RW, PRIVATE COMMUNICATIO
[7] DILORENZO JV, UNPUBLISHED
[8] OCCURENCE OF HIGH RESISTANCE LAYER AT VAPOR EPITAXIAL GAAS FILM-SUBSTRATE INTERFACE
HASEGAWA, F
SAITO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) : 1125 - &
[9] JOHNSON W, PRIVATE COMMUNICATIO
[10] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH
KNIGHT, JR
EFFER, D
EVANS, PR
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &