KINETICS OF THE CHEMICAL-REACTION BETWEEN DICHLOROSILANE AND AMMONIA DURING SILICON-NITRIDE FILM DEPOSITION

被引：22

作者：

PEEV, G ^{[1
]}

ZAMBOV, L ^{[1
]}

机构：

[1] INST MICROELECTR,BU-1784 SOFIA,BULGARIA

来源：

THIN SOLID FILMS | 1990年 / 189卷 / 02期

关键词：

D O I：

10.1016/0040-6090(90)90456-N

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The applicability of four mechanisms for describing the adsorption stage of the interaction between dichlorosilane and ammonia on a rigid surface during the deposition of silicon nitride films is analysed. It is established that a description of the experimental results in terms of the deposition rate is possible under the assumption of the reagents' adsorption on an energetically heterogeneous surface. When Freundlich's adsorption isotherm is applied, a kinetic equation is derived for determining the rate of the heterogeneous reaction between dichlorisilane and ammonia. The activation energy of the process is also determined. The equation derived also describes fairly well the data of other researchers. © 1990.

引用

页码：275 / 282

页数：8

共 12 条

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