R-MOSFET STRUCTURE-BASED ON CURRENT DIVISION

被引：17

作者：

VAVELIDIS, K

TSIVIDIS, Y

机构：

[1] Division of Computer Science, National Technical University of Athens, Zografou 15773, Athens

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 09期

关键词：

INTEGRATED CIRCUITS; FILTERS; MOSFETS;

D O I：

10.1049/el:19930491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A parallel-path combination of resistors and MOSFETs is proposed for use in integrated continuous-time filters and other circuits. The technique allows continuous incremental tuning while maintaining significantly better linearity than MOSFET-only structures.

引用

收藏

页码：732 / 733

页数：2

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