ANTIPHASE BOUNDARIES IN SEMICONDUCTING COMPOUNDS

被引：139

作者：

HOLT, DB

机构：

[1] Metallurgy Department, Imperial College, London S.W. 7, England

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1969年 / 30卷 / 06期

关键词：

D O I：

10.1016/0022-3697(69)90191-7

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Within crystals of semiconducting compounds regions can exist between which reversals of crystallographic polarity occur. These regions are antiphase domains. Antiphase boundaries (APBs) are crystallographic defect surfaces and type 2 APBs incorporate non-stoichiometric excess atoms of one of the constitutents of the compound. The geometry of APBs and their interactions with grain boundaries and with dislocations in semiconducting compounds with the sphalerite structure are treated and the properties of APBs are discussed. The evidence for their existence is reviewed and the techniques available for their study are outlined. © 1969.

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页码：1297 / &

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