TEMPERATURE-DEPENDENT CONVERSION ELECTRON MOSSBAUER MEASUREMENTS OF FE-57 IMPLANTED IN SILICON AND GERMANIUM

被引：15

作者：

SAWICKA, BD

SAWICKI, JA

STANEK, J

TYLISZCZAK, T

KOWALSKI, J

机构：

[1] JAGIELLONIAN UNIV,INST PHYS,PL-30060 CRACOW,POLAND

[2] TECH UNIV CRACOW,INST PHYS,CRACOW,POLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 56卷 / 02期

关键词：

D O I：

10.1002/pssa.2210560204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Conversion electron Mössbauer spectra of 3 at% Fe implanted in silicon and germanium are measured at temperatures between 78 and 550 K. Helium counters of electrons are used in back‐scattering geometry. The results indicate a temperature‐independent s‐electron density at the iron nuclei. A rather small temperature dependence of the electric field gradient is observed and is interpreted in terms of the T3/2‐relationship. The possible location of iron implanted in amorphous silicon and germanium is discussed. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：451 / 456

页数：6

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