RECOMBINATION OF INJECTED CARRIERS AT DISLOCATION EDGES IN SEMICONDUCTORS

被引：15

作者：

MCKELVEY, JP

LONGINI, RL

机构：

来源：

PHYSICAL REVIEW | 1955年 / 99卷 / 04期

关键词：

D O I：

10.1103/PhysRev.99.1227

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1227 / 1232

页数：6

共 5 条

[1] COTTRELL AH, 1950, PROGR METAL PHYS, V1, P78
[2] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM
HAYNES, JR
SHOCKLEY, W
[J]. PHYSICAL REVIEW, 1951, 81 (05): : 835 - 843
[3] VOLUME AND SURFACE RECOMBINATION RATES FOR INJECTED CARRIERS IN GERMANIUM
MCKELVEY, JP
LONGINI, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (05) : 634 - 641
[4] VOGEL, 1954, PHYS REV, V94, P1791
[5] OBSERVATIONS OF DISLOCATIONS IN LINEAGE BOUNDARIES IN GERMANIUM
VOGEL, FL
PFANN, WG
COREY, HE
THOMAS, EE
[J]. PHYSICAL REVIEW, 1953, 90 (03): : 489 - 490