APPLICATION OF INTERFACE DEMARCATION TO STUDY OF FACET GROWTH AND SEGREGATION - GERMANIUM

被引：23

作者：

WITT, AF

LICHTENSTEIGER, M

GATOS, HC

机构：

[1] MIT, DEPT MET & MAT SCI, CAMBRIDGE, MA 02139 USA

[2] MIT, CTR MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 06期

关键词：

D O I：

10.1149/1.2401919

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：787 / 790

页数：4

共 13 条

[1] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J].

BURTON, JA ;

PRIM, RC ;

SLICHTER, WP .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1987-1991

[2]

DIKHOFF JAM, 1964, PHILIPS TECH REV, V25, P195

[3] CROSS-SECTIONAL RESISTIVITY VARIATIONS IN GERMANIUM SINGLE CRYSTALS [J].

DIKHOFF, JAM .

SOLID-STATE ELECTRONICS, 1960, 1 (03) :202-&

[4] A COMPETITIVE ADSORPTION MODEL OF STEADY-STATE GROWTH OF A CRYSTAL FROM A LIGHTLY-DOPED MELT [J].

HOLMES, PJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (11) :1239-&

[5]

HULME KF, 1954, PHILOS MAG, V4, P1286

[6] MODULATION OF DOPANT SEGREGATION BY ELECTRIC CURRENTS IN CZOCHRALSKI-TYPE CRYSTAL GROWTH [J].

LICHTENSTEIGER, M ;

WITT, AF ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) :1013-+

[7] IMPURITY DISTRIBUTION IN SINGLE CRYSTALS .4. GROWTH CHARACTERISTICS AND IMPURITY INCORPORATION DURING FACET GROWTH [J].

MORIZANE, K ;

WITT, AF ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :747-&

[8]

MULLIN JB, 1962, COMPOUND SEMICONDUCT

[9] [100] FACETS IN PULLED CRYSTALS OF INSB [J].

STRAUSS, AJ .

SOLID-STATE ELECTRONICS, 1962, 5 (MAR-A) :97-98

[10]

TILLER WA, 1963, ART SCIENCE GROWING

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