ANOMALOUS DAMAGE MECHANISM IN PNP SILICON TRANSISTORS DUE TO THERMAL-NEUTRONS

被引：11

作者：

ARIMURA, I ^{[1
]}

ROSENBERG, C ^{[1
]}

机构：

[1] BOEING AEROSP CO, SEATTLE, WA 98124 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期

关键词：

D O I：

10.1109/TNS.1973.4327407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：274 / 279

页数：6

共 11 条

[1]

ARIMURA I, 1970, DEC DASA CLASS TREE

[2]

BROWN RR, 1967, CR814 NASA REP

[3] CONSIDERATIONS IN ESTABLISHING A STANDARD FOR NEUTRON DISPLACEMENT ENERGY EFFECTS IN SEMICONDUCTORS [J].

CONRAD, EE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) :200-+

[4] ELECTRICAL AND PHYSICAL MEASUREMENTS ON SILICON IMPLANTED WITH CHANNELED AND NONCHANNELED DOPANT IONS [J].

GIBSON, WM ;

MARTIN, FW ;

STENSGAARD, R ;

JENSEN, FP ;

MEYER, NI ;

GALSTER, G ;

JOHANSEN, A ;

OLSEN, JS .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :675-+

[5] PREPARATION OF A STANDARD TECHNIQUE FOR DETERMINATION OF NEUTRON EQUIVALENCE FOR BULK DAMAGE IN SILICON [J].

GREEN, ML ;

THATCHER, RK .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) :200-208

[6]

LARKHOROWITZ K, 1951, SEMICONDUCTING MATER

[7]

Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

[8]

Mayer J. W., 1970, ION IMPLANTATION SEM

[9]

SCHWUTTKE GH, 1968, RADIATION EFFECTS SE

[10] ON THE PRODUCTION OF DISPLACED ATOMS BY THERMAL NEUTRONS [J].

WALKER, RM .

JOURNAL OF NUCLEAR MATERIALS, 1960, 2 (02) :147-151

← 1 2 →