CONSIDERATIONS IN ESTABLISHING A STANDARD FOR NEUTRON DISPLACEMENT ENERGY EFFECTS IN SEMICONDUCTORS

被引:10
作者
CONRAD, EE
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关键词
D O I
10.1109/TNS.1971.4326433
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:200 / +
页数:1
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共 22 条
[1]  
CLELAND JW, 1965, 7 P INT C PHYS SEM, V3, P401
[2]  
DYE DL, 1970, E10 ASTM
[3]  
GREEN M, PRIVATE COMMUNICATIO
[4]  
GREEN ML, PRIVATE COMMUNICTIO
[5]   INJECTION DEPENDENCE OF TRANSIENT ANNEALING IN NEUTRON-IRRADIATED SILICON DEVICES [J].
GREGORY, BL ;
SANDER, HH .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :116-+
[6]   NEUTRON SPECTROSCOPY BY FOIL ACTIVATION IN RADIATION EFFECTS STUDIES [J].
HALBLEIB, JA ;
WALKER, JV ;
GREER, CL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :239-+
[7]  
HOLMES RR, 1970, OCT BELL TEL LAB REP
[8]  
Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33
[9]  
MCKENZIE JM, 1971, SCDR710045 REP
[10]   DISPLACEMENT DAMAGE IN SILICON AND GERMANIUM TRANSISTORS [J].
MESSENGER, GC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (02) :53-+