DISPLACEMENT DAMAGE IN SILICON AND GERMANIUM TRANSISTORS

被引：16

作者：

MESSENGER, GC

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1965年 / NS12卷 / 02期

关键词：

D O I：

10.1109/TNS.1965.4323568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：53 / +

页数：1

共 33 条

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[7]

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[10] DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].

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