S-BEND LOSS IN DISORDER-DELINEATED GAAS HETEROSTRUCTURE LASER WAVE-GUIDES WITH NATIVE AND BLUE SHIFTED ACTIVE REGIONS

被引：8

作者：

TANG, T ^{[1
]}

SWANSON, P ^{[1
]}

HERZINGER, C ^{[1
]}

MILLER, LM ^{[1
]}

COCKERILL, TM ^{[1
]}

BRYAN, RP ^{[1
]}

DETEMPLE, TA ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,ENGN RES CTR CPD SEMICOND MICROELECTR,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.103431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The routing ability of waveguide S-bend structures patterned by SiO 2 impurity induced layer disordering of a single GaAs quantum well graded barrier laser structure is investigated. For a raised-cosine bend with 100 μm offset guides, the measured transition length for 3 dB loss was less than 300 μm for near single mode guides of 1 μm width. In addition, vacancy-induced disordering of the native quantum well region is investigated and is shown to increase the band gap to a point where the material is low loss for radiation generated by the laser. The 3 dB length for these blue shifted cores actually decreased to about 230 μm, a fact attributed to reduced mode conversion.

引用

页码：741 / 743

页数：3

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