FRANZ-KELDYSH OSCILLATIONS IN THE PHOTOMODULATED SPECTRA OF AN IN0.12GA0.88AS/GAAS STRAINED-LAYER SUPERLATTICE

被引：21

作者：

CERDEIRA, F

VAZQUEZLOPEZ, C

RIBEIRO, E

RODRIGUES, PAM

LEMOS, V

SACILOTTI, MA

ROTH, AP

机构：

[1] UNIV AUTONOMA PUEBLA,INST CIENCIAS,PUEBLA,MEXICO

[2] TELEBRAS CPQD,CPQD,BR-13100 CAMPINAS,SP,BRAZIL

[3] NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.42.9480

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The low-temperature photoreflectance and phototransmittance spectra of a 100 -period In0.12Ga0.88As/GaAs strained-layer superlattice exhibit oscillatory behavior at photon energies above the absorption edge. This behavior can be consistently interpreted in terms of Franz-Keldysh oscillations induced by a built-in electric field of 104 V/cm and are made possible by a rather large electron miniband dispersion ( 38 meV). The reflectivity spectrum also shows signs of incipient Stark-ladder formation. © 1990 The American Physical Society.

引用

页码：9480 / 9485

页数：6

共 23 条

[1]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[2] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].