EFFECTS OF IMPURITIES ON PROCESSES OF ACID GENERATION IN CHEMICALLY AMPLIFIED RESISTS FOR ELECTRON-BEAM AND X-RAY-LITHOGRAPHY

被引：11

作者：

KOZAWA, T ^{[1
]}

UESAKA, M ^{[1
]}

YOSHIDA, Y ^{[1
]}

TAGAWA, S ^{[1
]}

机构：

[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 12B期

关键词：

CHEMICALLY AMPLIFIED RESIST; PULSE RADIOLYSIS; IMPURITY; ELECTRON BEAM AND X-RAY LITHOGRAPHY; INSTABILITY OF SENSITIVITY; PROTON ADDUCT;

D O I：

10.1143/JJAP.32.6049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It has been reported that some types of impurities severely degrade resist performance of chemically amplified resists. The effects of impurities on the processes of acid generation in the chemically amplified electron beam (EB) and X-ray resists have been studied by means of nanosecond pulse radiolysis. Amines, water, oxygen, alcohols, silanol and casting solvents were used as impurities. The effects of the impurities in the model solutions of chemically amplified resists (onium salt solutions in m-cresol) were measured using pyrene as an indicator of protonation and charge transfer reaction. The rate constants for the reactions of several kinds of impurities with proton adducts of m-cresol were obtained.

引用

页码：6049 / 6051

页数：3

共 16 条

[1]

AZUMA T, 1991, JPN J APPL PHYS TO 5, P181

[2] METAL-FREE CHEMICALLY AMPLIFIED POSITIVE RESIST RESOLVING 0.2-MU-M IN X-RAY-LITHOGRAPHY [J].

BAN, H ;

NAKAMURA, J ;

DEGUCHI, K ;

TANAKA, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06) :3387-3391

[3]

Dammel R., 1989, Microelectronic Engineering, V9, P575, DOI 10.1016/0167-9317(89)90123-8

[4]

DAMMEL R, 1992, P AM CHEM SOC DIV PO, V66, P184

[5] PROCESS OPTIMIZATION OF THE ADVANCED NEGATIVE ELECTRON-BEAM RESIST SAL605 [J].

FEDYNYSHYN, TH ;

CRONIN, MF ;

POLI, LC ;

KONDEK, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1454-1460

[6] THE RELATIONSHIP BETWEEN CRITICAL DIMENSION SHIFT AND DIFFUSION IN NEGATIVE CHEMICALLY AMPLIFIED RESIST SYSTEMS [J].

FEDYNYSHYN, TH ;

CRONIN, MF ;

SZMANDA, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06) :3380-3386

[7]

HAYASHI N, 1990, JPN J APPL PHYS TO 4, P124

[8] ADVANCES IN CHEMICAL AMPLIFICATION RESIST SYSTEMS [J].

ITO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B) :4273-4282

[9] RADIATION-INDUCED ACID GENERATION REACTIONS IN CHEMICALLY AMPLIFIED RESISTS FOR ELECTRON-BEAM AND X-RAY-LITHOGRAPHY [J].

KOZAWA, T ;

YOSHIDA, Y ;

UESAKA, M ;

TAGAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B) :4301-4306

[10]

LINGNAU J, 1990, POLYM MICROELECTRONI, P445

← 1 2 →