MECHANISM OF ANODIC-OXIDATION OF HG0.8CD0.2TE

被引：31

作者：

AHEARN, JS

DAVIS, GD

BYER, NE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：756 / 759

页数：4

共 9 条

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[2] CATAGNUS PC, 1976, Patent No. 3997018
[3] ANODIC OXIDE COMPOSITION AND HG DEPLETION AT THE OXIDE-SEMICONDUCTOR INTERFACE OF HG1-XCDXTE
DAVIS, GD
SUN, TS
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BYER, NE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 472 - 476
[4] JANOUSEK BK, UNPUB
[5] JANOUSEK BK, 1980, P APS C PHYS MOS INS
[6] KRAUS H, 1974, Patent No. 3799803
[7] INTERFACE BETWEEN HG1-XCDXTE AND ITS NATIVE OXIDE
NEMIROVSKY, Y
KIDRON, I
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (10) : 831 - 837
[8] PLASMA ANODIZATION OF HG1-XCDXTE
NEMIROVSKY, Y
GOSHEN, R
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 813 - 815
[9] OXIDE AND INTERFACE PROPERTIES OF ANODIC FILMS ON HG1-XCDXTE
SUN, TS
BUCHNER, SP
BYER, NE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1067 - 1073