VERY HIGH-PURITY INP EPILAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：45

作者：

RAZEGHI, M ^{[1
]}

MAUREL, P ^{[1
]}

DEFOUR, M ^{[1
]}

OMNES, F ^{[1
]}

NEU, G ^{[1
]}

KOZACKI, A ^{[1
]}

机构：

[1] CNRS,F-06565 VALBONNE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.99068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：117 / 119

页数：3

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[5] 1ST OBSERVATION OF QUANTUM HALL-EFFECT IN A GAINASP-INP HETEROSTRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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