THE GROWTH OF ULTRA-PURE INP BY VAPOR-PHASE EPITAXY

被引：25

作者：

TAYLOR, LL

ANDERSON, DA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90248-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：55 / 59

页数：5

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TAYLOR, LL .

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[6]

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[7]

CLARKE RC, 1974, J CRYSTAL GROWTH, V28, P166

[8]

DAVIES P, 1982, INT M RELATIONSHIP E

[9] A STUDY OF VAPOR-PHASE EPITAXY OF INDIUM-PHOSPHIDE [J].

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[10]

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