HIGH-PURITY POLYCRYSTALLINE INP

被引：6

作者：

ADAMSKI, JA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 60卷 / 01期

关键词：

D O I：

10.1016/0022-0248(82)90183-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：141 / 143

页数：3

共 7 条

[1]

ADAMSKI JA, 1982, RADCTR82104

[2]

FAUTH TA, 1979, RADCTR79246

[3] LIQUID-PHASE EPITAXIAL-GROWTH OF INP AND INGAASP ALLOYS [J].

GROVES, SH ;

PLONKO, MC .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :81-87

[4] GROWTH OF INP BY INFINITE SOLUTION LPE [J].

HOLMES, DE ;

KAMATH, GS .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :51-58

[5] ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN INP - DETERMINATION OF THE COMPENSATION RATIO [J].

WALUKIEWICZ, W ;

LAGOWSKI, J ;

JASTRZEBSKI, L ;

RAVA, P ;

LICHTENSTEIGER, M ;

GATOS, CH ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2659-2668

[6] ANOMALOUSLY HIGH MOBILITY IN GAAS [J].

WOLFE, CM ;

STILLMAN, GE ;

SPEARS, DL ;

HILL, DE ;

WILLIAMS, FV .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :732-734

[7] SILICON CONTAMINATION OF INP SYNTHESIZED UNDER HIGH PHOSPHORUS PRESSURE [J].

YAMAMOTO, A ;

SHINOYAMA, S ;

UEMURA, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :585-589

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