A GENERALIZED-MODEL FOR THE RECONSTRUCTION OF (001) SURFACES OF III-V COMPOUND SEMICONDUCTORS BASED ON A RHEED STUDY OF INSB(001)

RHEED patterns for the InSb(001) asymmetric (1 × 3) structure were taken as a function of the Sb coverage on samples prepared by MBE. A twofold periodicity orthogonal to the asymmetric threefold periodicity has been observed. We propose a simple model based on the (2 × 4) structure to explain the asymmetric (1 × 3) structure, the threefold periodicity being generated by domain formation and the amount of the splitting explained by the degree of Sb coverage. We also show how this model can be used to explain most of the reconstructions observed on the {001} surfaces of III-V compound semiconductors. © 1990.