STRUCTURE AND PROPERTIES OF DEEPLY N-DOPED POLYACENIC SEMICONDUCTOR (PAS)

被引：11

作者：

YATA, S ^{[1
]}

KINOSHITA, H ^{[1
]}

KOMORI, M ^{[1
]}

ANDO, N ^{[1
]}

KASHIWAMURA, T ^{[1
]}

HARADA, T ^{[1
]}

TANAKA, K ^{[1
]}

YAMABE, T ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DIV MOLEC ENGN,SAKYO KU,KYOTO 60601,JAPAN

来源：

SYNTHETIC METALS | 1993年 / 55卷 / 01期

关键词：

D O I：

10.1016/0379-6779(93)90963-W

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polyacenic semiconductor (PAS) films (H/C=0.30) prepared from pyrolytic treatment of phenol-formaldehyde resin can be deeply doped with lithium up to 16.5% starting from IV versus Li/Li+ with good reversibility. From the 1st to the 100th doping-undoping cycle the X ray diffraction pattern almost did not change. It has been found that PAS has excellent stability even at the deeply doped state. Moreover, the XPS spectra show that the doped lithium in PAS is in neither metallic nor ionic state.

引用

页码：388 / 393

页数：6

共 11 条

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