RANDOMLY ORIENTED ANGSTROM-SCALE MICROROUGHNESS AT THE SI(100) SIO2 INTERFACE PROBED BY OPTICAL 2ND-HARMONIC GENERATION

被引:74
作者
DADAP, JI
DORIS, B
DENG, Q
DOWNER, MC
LOWELL, JK
DIEBOLD, AC
机构
[1] ADV MICRO DEVICES INC,AUSTIN,TX 78741
[2] SEMATECH,AUSTIN,TX 78741
[3] MOTOROLA INC,AUSTIN,TX 78721
关键词
D O I
10.1063/1.111711
中图分类号
O59 [应用物理学];
学科分类号
摘要
Femtosecond pulses from a Kerr-Lens mode-locked Ti:sapphire laser are used to generate second harmonic from a series of native-oxidized Si(100)/SiO2 and hydrogen-terminated Si(100) samples prepared with systematically varied interfacial microroughness with root-mean-square feature heights ranging from 0.6 to 4.3 angstrom. Rotationally anisotropic second harmonic signals using different polarization configurations were measured in air and correlated with atomic force microscopy measurements. The results demonstrate rapid, noncontact, noninvasive measurement of Angstrom-level Si(100)/SiO2 interface roughness by optical second harmonic generation.
引用
收藏
页码:2139 / 2141
页数:3
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