IDEAL HYDROGEN TERMINATION OF THE SI-(111) SURFACE

被引:1339
作者
HIGASHI, GS
CHABAL, YJ
TRUCKS, GW
RAGHAVACHARI, K
机构
[1] AT and T Bell Laboratories, Murray Hill
关键词
D O I
10.1063/1.102728
中图分类号
O59 [应用物理学];
学科分类号
摘要
Aqueous HF etching of silicon surfaces results in the removal of the surface oxide and leaves behind silicon surfaces terminated by atomic hydrogen. The effect of varying the solution pH on the surface structure is studied by measuring the SiH stretch vibrations with infrared absorption spectroscopy. Basic solutions (pH=9-10) produce ideally terminated Si(111) surfaces with silicon monohydride (3/4 SiH) oriented normal to the surface. The surface is found to be very homogeneous with low defect density (<0.5%) and narrow vibrational linewidth (0.95 cm-1).
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页码:656 / 658
页数:3
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