CHEMICAL-REACTIONS OF HYDROGENOUS SPECIES IN THE SI/SIO2 SYSTEM

Recent studies involving hydrogen and its compounds in the Si/SiO2 system are examined as a basis for a comprehensive model of hydrogen physical chemistry in the system. A model will require resolution of contradictions among experimental findings on passivation of P-b centers, radiation damage mechanisms, diffusion, and physisorption and chemisorption in the SiO2 lattice. New findings on bias-temperature instability suggest approaches which may resolve some key problems.