ROOM-TEMPERATURE REACTIONS INVOLVING SILICON DANGLING BOND CENTERS AND MOLECULAR-HYDROGEN IN AMORPHOUS SIO2 THIN-FILMS ON SILICON

被引：77

作者：

CONLEY, JF

LENAHAN, PM

机构：

[1] Pennsylvania State University, University Park

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 01期

关键词：

D O I：

10.1063/1.108812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exposing thin films of amorphous SiO2 to molecular hydrogen at room temperature converts some silicon dangling bond defects, E' centers, into two hydrogen coupled complexes. These reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/silicon devices.

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页码：40 / 42

页数：3

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