ELECTRON-SPIN-RESONANCE STUDY OF E-TRAPPING CENTERS IN SIMOX BURIED OXIDES

被引:47
作者
CONLEY, JF [1 ]
LENAHAN, PM [1 ]
ROITMAN, P [1 ]
机构
[1] NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899
关键词
D O I
10.1109/23.124100
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We combine electron spin resonance and capacitance versus voltage measurements with vacuum ultraviolet and ultraviolet illumination sequences to study E' centers in a variety of SIMOX buried oxides. The oxides had all been annealed above 1300-degrees-C. Our results clearly show that E' centers play an important, probably dominating role in the trapping behavior of these oxides. This role is considerably different from the role that E' centers play in thermal oxides.
引用
收藏
页码:1247 / 1252
页数:6
相关论文
共 18 条
[1]   ELECTRON-PARAMAGNETIC-RES OF DEFECTS IN SILICON-ON-INSULATOR STRUCTURES FORMED BY ION-IMPLANTATION .1. O+ IMPLANTATION [J].
BARKLIE, RC ;
HOBBS, A ;
HEMMENT, PLF ;
REESON, K .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (32) :6417-6432
[2]   TIME-DEPENDENT HOLE AND ELECTRON TRAPPING EFFECTS IN SIMOX BURIED OXIDES [J].
BOESCH, HE ;
TAYLOR, TL ;
HITE, LR ;
BAILEY, WE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) :1982-1989
[3]  
CONLEY JF, 1991, P IEEE SOS SOI TECHN
[4]  
CONLEY JF, 1991, SIMOX BURIED OXIDES
[5]   OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J].
FEIGL, FJ ;
FOWLER, WB ;
YIP, KL .
SOLID STATE COMMUNICATIONS, 1974, 14 (03) :225-229
[6]   E' CENTER IN GLASSY SIO2 - O-17, H-1, AND VERY WEAK SI-29 SUPERHYPERFINE STRUCTURE [J].
GRISCOM, DL .
PHYSICAL REVIEW B, 1980, 22 (09) :4192-4202
[7]   MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS [J].
JAUSSAUD, C ;
STOEMENOS, J ;
MARGAIL, J ;
DUPUY, M ;
BLANCHARD, B ;
BRUEL, M .
APPLIED PHYSICS LETTERS, 1985, 46 (11) :1064-1066
[8]   HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J].
LENAHAN, PM ;
DRESSENDORFER, PV .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3495-3499
[9]   MICROSTRUCTURAL VARIATIONS IN RADIATION HARD AND SOFT OXIDES OBSERVED THROUGH ELECTRON-SPIN RESONANCE [J].
LENAHAN, PM ;
DRESSENDORFER, PV .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4602-4604
[10]   ELECTRON-SPIN-RESONANCE STUDIES ON BURIED OXIDE SILICON-ON-INSULATOR [J].
MAKINO, T ;
TAKAHASHI, J .
APPLIED PHYSICS LETTERS, 1987, 50 (05) :267-269