ELECTRON-SPIN-RESONANCE STUDIES ON BURIED OXIDE SILICON-ON-INSULATOR

被引：11

作者：

MAKINO, T

TAKAHASHI, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 05期

关键词：

D O I：

10.1063/1.98221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：267 / 269

页数：3

共 21 条

[1] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].

BRODSKY, MH ;

TITLE, RS ;

WEISER, K ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[2] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J].

CAPLAN, PJ ;

POINDEXTER, EH ;

DEAL, BE ;

RAZOUK, RR .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5847-5854

[3] HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J].

CELLER, GK ;

HEMMENT, PLF ;

WEST, KW ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :532-534

[4] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J].

CROWDER, BL ;

TITLE, RS ;

BRODSKY, MH ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1970, 16 (05) :205-&

[5] DEPENDENCE OF SILICON-ON-INSULATOR TRANSISTOR PARAMETERS ON OXYGEN IMPLANTATION TEMPERATURE [J].

DAVIS, JR ;

TAYLOR, MR ;

SPILLER, GDT ;

SKEVINGTON, PJ ;

HEMMENT, PLF .

APPLIED PHYSICS LETTERS, 1986, 48 (19) :1279-1281

[6] SIMOX TECHNOLOGY AND ITS APPLICATION TO CMOS LSIS [J].

IZUMI, K ;

OMURA, Y ;

SAKAI, T .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (05) :845-861

[7] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

IZUMI, K ;

DOKEN, M ;

ARIYOSHI, H .

ELECTRONICS LETTERS, 1978, 14 (18) :593-594

[8]

IZUMI K, 1984, MATER RES SOC S P, V23, P443

[9] ELECTRICAL AND OPTICAL-PROPERTIES OF BORON DOPED AMORPHOUS SI PREPARED BY CVD METHOD [J].

MAKINO, T ;

NAKAMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) :1897-1898

[10] MICROSTRUCTURE OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR [J].

MAO, BY ;

CHANG, PH ;

LAM, HW ;

SHEN, BW ;

KEENAN, JA .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :794-796

← 1 2 3 →