DEPENDENCE OF SILICON-ON-INSULATOR TRANSISTOR PARAMETERS ON OXYGEN IMPLANTATION TEMPERATURE

被引：14

作者：

DAVIS, JR

TAYLOR, MR

SPILLER, GDT

SKEVINGTON, PJ

HEMMENT, PLF

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 19期

关键词：

D O I：

10.1063/1.97003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1279 / 1281

页数：3

共 11 条

[1] TEMPERATURE-DEPENDENCE AND NON-UNIFORMITY OF ELECTRICAL-PROPERTIES OF SOI FILMS OBTAINED BY OXYGEN IMPLANTATION [J].

CRISTOLOVEANU, S ;

WYNCOLL, J ;

SPINELLI, P ;

HEMMENT, PLF ;

ARROWSMITH, RP .

PHYSICA B & C, 1985, 129 (1-3) :249-254

[2] EFFECT OF OXYGEN ON ELECTRICAL-PROPERTIES OF SILICON [J].

GLOWINKE, TS ;

WAGNER, JB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1977, 38 (09) :963-970

[3] NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION [J].

GREENFIELD, JA ;

DUTTON, RW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1520-1532

[4] MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS [J].

JAUSSAUD, C ;

STOEMENOS, J ;

MARGAIL, J ;

DUPUY, M ;

BLANCHARD, B ;

BRUEL, M .

APPLIED PHYSICS LETTERS, 1985, 46 (11) :1064-1066

[5] THRESHOLD VOLTAGE MODEL OF ESFI-SOS-MOS TRANSISTORS [J].

KRANZER, D ;

SCHLUTER, K ;

TAKACS, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :890-894

[6] THEORETICAL-ANALYSIS ON THRESHOLD CHARACTERISTICS OF SURFACE-CHANNEL MOSFETS FABRICATED ON A BURIED OXIDE [J].

OMURA, Y ;

NAKASHIMA, S ;

IZUMI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1656-1662

[7] MICROSTRUCTURAL DEFECTS IN LASER RECRYSTALLIZED, GRAPHITE STRIP HEATER RECRYSTALLIZED AND BURIED OXIDE SILICON-ON-INSULATOR SYSTEMS - A STATUS-REPORT [J].

PINIZZOTTO, RF .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) :559-582

[8] A TWO-DIMENSIONAL ANALYSIS FOR MOSFETS FABRICATED ON BURIED SIO2 LAYER [J].

SANO, E ;

KASAI, R ;

OHWADA, K ;

ARIYOSHI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2043-2050

[9] STRESS-ENHANCED CARRIER MOBILITY IN ZONE-MELTING RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO-2-COATED SUBSTRATES [J].

TSAUR, BY ;

FAN, JCC ;

GEIS, MW .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :322-324

[10] THE EFFECTS OF DIFFERENT IMPLANTATION AND ANNEALING TEMPERATURES ON THE STRUCTURAL AND CHEMICAL-PROPERTIES OF HIGH-DOSE OXYGEN-ION-IMPLANTED SILICON [J].

TUPPEN, CG ;

TAYLOR, MR ;

HEMMENT, PLF ;

ARROWSMITH, RP .

THIN SOLID FILMS, 1985, 131 (3-4) :233-244

← 1 2 →