STRESS-ENHANCED CARRIER MOBILITY IN ZONE-MELTING RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO-2-COATED SUBSTRATES

被引：61

作者：

TSAUR, BY

FAN, JCC

GEIS, MW

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 04期

关键词：

D O I：

10.1063/1.93077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：322 / 324

页数：3

共 9 条

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[9] N-CHANNEL DEEP-DEPLETION METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO2 [J].

TSAUR, BY ;

GEIS, MW ;

FAN, JCC ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

APPLIED PHYSICS LETTERS, 1981, 39 (11) :909-911

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