MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS

[1] ON DIFFRACTION CONTRAST FROM INCLUSIONS [J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (94): : 1649 - &

[2] DIFFRACTION CONTRAST FROM SPHERICALLY SYMMETRICAL COHERENCY STRAINS [J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (91): : 1083 - &

[3] FORMATION OF BURIED OXIDE LAYERS BY HIGH-DOSE IMPLANTATION OF OXYGEN IONS IN SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (04) : 635 - 654

[4] FATHY D, 1983, I PHYSICS C SERIES, V67, P479

[5] OXYGEN DISTRIBUTIONS IN SYNTHESIZED SIO2 LAYERS FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON [J]. VACUUM, 1984, 34 (1-2) : 203 - 208

[6] HOLLAND OW, 1984, APPL PHYS LETT, V45, P10

[7] AN INVESTIGATION OF THE PROPERTIES OF AN EPITAXIAL SI LAYER ON A SUBSTRATE WITH A BURIED SIO2 LAYER FORMED BY OXYGEN-ION IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (06): : 890 - 895

[8] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594

[9] JULIET P, 1984, CEA84575 REP

[10] CHARACTERIZATION OF STRUCTURAL DEFECTS IN ANNEALED SILICON CONTAINING OXYGEN [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 3813 - 3825

[1] ON DIFFRACTION CONTRAST FROM INCLUSIONS [J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (94): : 1649 - &

[2] DIFFRACTION CONTRAST FROM SPHERICALLY SYMMETRICAL COHERENCY STRAINS [J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (91): : 1083 - &

[3] FORMATION OF BURIED OXIDE LAYERS BY HIGH-DOSE IMPLANTATION OF OXYGEN IONS IN SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (04) : 635 - 654

[4] FATHY D, 1983, I PHYSICS C SERIES, V67, P479

[5] OXYGEN DISTRIBUTIONS IN SYNTHESIZED SIO2 LAYERS FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON [J]. VACUUM, 1984, 34 (1-2) : 203 - 208

[6] HOLLAND OW, 1984, APPL PHYS LETT, V45, P10

[7] AN INVESTIGATION OF THE PROPERTIES OF AN EPITAXIAL SI LAYER ON A SUBSTRATE WITH A BURIED SIO2 LAYER FORMED BY OXYGEN-ION IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (06): : 890 - 895

[8] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594

[9] JULIET P, 1984, CEA84575 REP

[10] CHARACTERIZATION OF STRUCTURAL DEFECTS IN ANNEALED SILICON CONTAINING OXYGEN [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 3813 - 3825