OXYGEN DISTRIBUTIONS IN SYNTHESIZED SIO2 LAYERS FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON

被引：50

作者：

HEMMENT, PLF

MAYDELLONDRUSZ, E

STEVENS, KG

KILNER, JA

BUTCHER, J

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT MET & MAT SCI,LONDON SW7 2AZ,ENGLAND

[2] MIDDLESEX POLYTECH,CTR MICROELECTR,LONDON N14 5PN,ENGLAND

来源：

关键词：

D O I：

10.1016/0042-207X(84)90128-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：203 / 208

页数：6

共 15 条

[1] ALDERMAN J, 1982, ESSDERC 82
[2] STUDY OF SILICON-OXIDES PREPARED BY OXYGEN IMPLANTATION INTO SILICON
BADAWI, MH
ANAND, KV
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (14) : 1931 - 1942
[3] BAYERL P, 1978, IBMM 78
[4] DAS K, 1981, I PHYS C SER, V60, P307
[5] RUTHERFORD BACKSCATTERING ANALYSIS OF OXIDE LAYERS FORMED BY ION-IMPLANTATION INTO SINGLE-CRYSTAL SILICON
GILL, SS
WILSON, IH
[J]. THIN SOLID FILMS, 1978, 55 (03) : 435 - 448
[6] HANTALA M, 1983, NUCL INSTRUM METH
[7] HAYASHI T, 1981, I PHYS C SER, V59, P533
[8] HEMMENT PLF, 1982, IBMM 82
[9] IZUME K, 1982, ELECTRONIC MATERIAL
[10] CHARACTERISTICS OF MOSFETS FABRICATED IN SILICON-ON-INSULATOR MATERIAL FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION
LAM, HW
PINIZZOTTO, RF
YUAN, HT
BELLAVANCE, DW
[J]. ELECTRONICS LETTERS, 1981, 17 (10) : 356 - 358