RUTHERFORD BACKSCATTERING ANALYSIS OF OXIDE LAYERS FORMED BY ION-IMPLANTATION INTO SINGLE-CRYSTAL SILICON

被引：29

作者：

GILL, SS

WILSON, IH

机构：

来源：

THIN SOLID FILMS | 1978年 / 55卷 / 03期

关键词：

D O I：

10.1016/0040-6090(78)90161-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：435 / 448

页数：14

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[6] FORMATION OF THIN SIO2-FILMS BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON AND THEIR INVESTIGATION BY IR TECHNIQUES [J].

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[7] THIN SIO2-FILMS FORMED BY OXYGEN ION-IMPLANTATION IN SILICON - ELECTRON-MICROSCOPE INVESTIGATIONS OF SI-SIO2 INTERFACE STRUCTURES AND THEIR C-V CHARACTERISTICS [J].

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[8] DIELECTRIC-BREAKDOWN PROPERTIES AND IV CHARACTERISTICS OF THIN SIO2-FILMS FORMED BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON [J].

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