FORMATION OF BURIED OXIDE LAYERS BY HIGH-DOSE IMPLANTATION OF OXYGEN IONS IN SILICON

被引：3

作者：

DAS, K ^{[1
]}

BUTCHER, JB ^{[1
]}

ANAND, KV ^{[1
]}

机构：

[1] MIDDLESEX POLYTECH,CTR MICROELECTR,LONDON N11 2NQ,ENGLAND

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 04期

关键词：

D O I：

10.1007/BF02653986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：635 / 654

页数：20

相关论文

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