CARRIER LIFETIMES IN SILICON EPITAXIAL LAYERS DEPOSITED ON OXYGEN-IMPLANTED SUBSTRATES

被引：9

作者：

DAS, K

SHORTHOUSE, GP

BUTCHER, JB

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 04期

关键词：

D O I：

10.1049/el:19830098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：139 / 140

页数：2

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共 9 条

[1] STUDY OF SILICON-OXIDES PREPARED BY OXYGEN IMPLANTATION INTO SILICON
BADAWI, MH
ANAND, KV
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (14) : 1931 - 1942
[2] DAS K, UNPUB J ELECTRON MAT
[3] DAS K, 1981, ELECTROCHEM SOC P, V81, P427
[4] DAS K, 1981, I PHYS C SER, V60, P307
[5] IZUMI K, 1978, ELECTRON LETT, V14, P493
[6] CORRELATIONS BETWEEN REVERSE RECOVERY TIME AND LIFETIME OF P-N JUNCTION DRIVEN BY A CURRENT RAMP
KAO, YC
DAVIS, JR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) : 652 - &
[7] CHARACTERISTICS OF MOSFETS FABRICATED IN SILICON-ON-INSULATOR MATERIAL FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION
LAM, HW
PINIZZOTTO, RF
YUAN, HT
BELLAVANCE, DW
[J]. ELECTRONICS LETTERS, 1981, 17 (10) : 356 - 358
[8] A LOW-POWER AND HIGH-SPEED SUB-MICRON BURIED-CHANNEL MOSFET FABRICATED ON THE BURIED OXIDE
OMURA, Y
SANO, E
OHWADA, K
HIRATA, K
SAKAKIBARA, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) : 1331 - 1332
[9] ELECTRICAL-PROPERTIES OF SILICON-IMPLANTED FURNACE-ANNEALED SILICON-ON-SAPPHIRE DEVICES
ROULET, ME
SCHWOB, P
GOLECKI, I
NICOLET, MA
[J]. ELECTRONICS LETTERS, 1979, 15 (17) : 527 - 529