CORRELATIONS BETWEEN REVERSE RECOVERY TIME AND LIFETIME OF P-N JUNCTION DRIVEN BY A CURRENT RAMP

被引：28

作者：

KAO, YC

DAVIS, JR

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1970.17052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：652 / &

共 7 条

[1] REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS
BENDA, H
SPENKE, E
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1331 - &
[2] POST-INJECTION BARRIER ELECTROMOTIVE FORCE OF P-N JUNCTIONS
GOSSICK, BR
[J]. PHYSICAL REVIEW, 1953, 91 (04): : 1012 - 1013
[3] POWER RECTIFIERS AND TRANSISTORS
HALL, RN
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518
[4] HUFFMAN A, 1964, SOLID STATE ELECTRON, V7, P717
[5] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS
KINGSTON, RH
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05): : 829 - 834
[6] KUNO HJ, 1964, IEEE T ELECTRON DEVI, VED11, P8
[7] Moll J. L., 1962, P IRE, V50, P43