A LOW-POWER AND HIGH-SPEED SUB-MICRON BURIED-CHANNEL MOSFET FABRICATED ON THE BURIED OXIDE

被引：9

作者：

OMURA, Y

SANO, E

OHWADA, K

HIRATA, K

SAKAKIBARA, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 08期

关键词：

D O I：

10.1109/T-ED.1982.20876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1331 / 1332

页数：2

相关论文

共 10 条

[1] ANALYSIS OF DEEP DEPLETION MOSFET AND USE OF DC CHARACTERISTICS FOR DETERMINING BULK-CHANNEL CHARGE-COUPLED DEVICE PARAMETERS
HAKEN, RA
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (05) : 753 - 761
[2] FORMATION OF ABRUPT INTERFACES BETWEEN SURFACE SILICON AND BURIED SIO2 LAYERS BY VERY HIGH-DOSE OXYGEN-ION IMPLANTATION
HAYASHI, T
OKAMOTO, H
HOMMA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : 1005 - 1006
[3] Hirata K., 1980, International Electron Devices Meeting. Technical Digest, P405
[4] HIGH-SPEED C-MOS IC USING BURIED SIO2 LAYERS FORMED BY ION-IMPLANTATION
IZUMI, K
DOKEN, M
ARIYOSHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 151 - 154
[5] A GIGABIT MOS LOGIC-CIRCUIT WITH BURIED CHANNEL MOSFETS
NISHIUCHI, K
SHIBAYAMA, H
NAKAMURA, T
HISATSUGU, T
ISHIKAWA, H
FUKUKAWA, Y
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (05) : 809 - 816
[6] NISHIUCHI K, 1978, IEDM TECH DIG, P26
[7] A HIGH-SPEED BURIED CHANNEL MOSFET ISOLATED BY AN IMPLANTED SILICON DIOXIDE LAYER
OHWADA, K
OMURA, Y
SANO, E
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1084 - 1087
[8] Sakakibara Y., 1980, International Electron Devices Meeting. Technical Digest, P425
[9] SATO M, 1980, 2ND P S DRY PROC TOK, P11
[10] DC AND HIGH-FREQUENCY CHARACTERISTICS OF BUILT-IN CHANNEL MOS-FETS
SCHMIDT, PE
DAS, MB
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (03) : 495 - 505