DC AND HIGH-FREQUENCY CHARACTERISTICS OF BUILT-IN CHANNEL MOS-FETS

被引：22

作者：

SCHMIDT, PE

DAS, MB

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

[2] PENN STATE UNIV,SOLID STATE DEVICE LAB,UNIVERSITY PK,PA 16802

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 03期

关键词：

D O I：

10.1016/0038-1101(78)90018-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：495 / 505

页数：11

相关论文

共 24 条

[1] BECHTELL NG, 1970, SOLID ST CIRCUIT C D, P50
[2] BORKAN H, 1963, RCA REV, V24, P153
[3] DEPENDENCE OF CHARACTERISTICS OF MOS-TRANSISTORS ON SUBSTRATE RESISTIVITY
DAS, MB
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (03) : 305 - +
[4] GENERALISED HIGH-FREQUENCY NETWORK THEORY OF FIELD-EFFECT TRANSISTORS
DAS, MB
[J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1967, 114 (01): : 50 - +
[5] HIGH-FREQUENCY LIMITATIONS OF ABRUPT-JUNCTION FETS
DAS, MB
SCHMIDT, P
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) : 779 - 792
[6] CHARGE-CONTROL ANALYSIS OF MOS AND JUNCTION-GATE FIELD-EFFECT TRANSISTORS
DAS, MB
[J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (10): : 1565 - +
[7] FET NOISE SOURCES AND THEIR EFFECTS ON AMPLIFIER PERFORMANCE AT LOW FREQUENCIES
DAS, MB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (03) : 338 - +
[8] PHYSICAL LIMITATIONS OF MOS STRUCTURES
DAS, MB
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 305 - +
[9] DAS MB, 1969, 10 PENN STAT U DEP E
[10] DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION
EDWARDS, JR
MARR, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 283 - 289