ANALYSIS OF DEEP DEPLETION MOSFET AND USE OF DC CHARACTERISTICS FOR DETERMINING BULK-CHANNEL CHARGE-COUPLED DEVICE PARAMETERS

被引：30

作者：

HAKEN, RA

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 05期

关键词：

D O I：

10.1016/0038-1101(78)90008-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：753 / 761

页数：9

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