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ANALYSIS OF DEEP DEPLETION MOSFET AND USE OF DC CHARACTERISTICS FOR DETERMINING BULK-CHANNEL CHARGE-COUPLED DEVICE PARAMETERS
被引:30
作者
:
HAKEN, RA
论文数:
0
引用数:
0
h-index:
0
HAKEN, RA
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1978年
/ 21卷
/ 05期
关键词
:
D O I
:
10.1016/0038-1101(78)90008-4
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:753 / 761
页数:9
相关论文
共 13 条
[1]
COMPLEMENTARY MOS 1.2 VOLT WATCH CIRCUIT USING ION IMPLANTATION
COPPEN, PJ
论文数:
0
引用数:
0
h-index:
0
COPPEN, PJ
BAUER, LO
论文数:
0
引用数:
0
h-index:
0
BAUER, LO
AUBUCHON, KG
论文数:
0
引用数:
0
h-index:
0
AUBUCHON, KG
MOYER, NE
论文数:
0
引用数:
0
h-index:
0
MOYER, NE
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(02)
: 165
-
&
[2]
CRAWFORD RH, 1972, ELECTRONICS, V45, P85
[3]
DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION
EDWARDS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
EDWARDS, JR
MARR, G
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
MARR, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
: 283
-
289
[4]
COMPARISON OF STATIC BULK-CHANNEL CHARGE-COUPLED DEVICE CHARACTERISTICS USING UNIFORM, GAUSSIAN AND MEASURED IMPURITY DISTRIBUTIONS
HAKEN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SOUTHAMPTON,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
UNIV SOUTHAMPTON,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
HAKEN, RA
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(09)
: 789
-
797
[5]
MODELING OF AN ION-IMPLANTED SILICON-GATE DEPLETION-MODE IGFET
HUANG, JST
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HUANG, JST
TAYLOR, GW
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
TAYLOR, GW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(11)
: 995
-
1001
[6]
CHARACTERISTICS OF A DEPLETION-TYPE IGFET
HUANG, JST
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HUANG, JST
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(05)
: 513
-
514
[7]
THRESHOLD SHIFT CALCULATIONS FOR ION IMPLANTED MOS DEVICES
MACPHERSON, MR
论文数:
0
引用数:
0
h-index:
0
MACPHERSON, MR
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(12)
: 1319
-
+
[8]
HIGH-PERFORMANCE N-CHANNEL MOS LSI USING DEPLETION-TYPE LOAD ELEMENTS
MASUHARA, T
论文数:
0
引用数:
0
h-index:
0
MASUHARA, T
NAGATA, M
论文数:
0
引用数:
0
h-index:
0
NAGATA, M
HASHIMOTO, N
论文数:
0
引用数:
0
h-index:
0
HASHIMOTO, N
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1972,
SC 7
(03)
: 224
-
+
[9]
MEASUREMENTS ON DEPLETION-MODE FIELD-EFFECT TRANSISTORS AND BURIED CHANNEL MOS CAPACITORS FOR CHARACTERIZATION OF BULK TRANSFER CHARGE-COUPLED-DEVICES
MOHSEN, AM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
MOHSEN, AM
MORRIS, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
MORRIS, FJ
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(05)
: 407
-
416
[10]
REDDI VGK, 1968, IEEE T ELECTRON DEV, VED15, P151
←
1
2
→
共 13 条
[1]
COMPLEMENTARY MOS 1.2 VOLT WATCH CIRCUIT USING ION IMPLANTATION
COPPEN, PJ
论文数:
0
引用数:
0
h-index:
0
COPPEN, PJ
BAUER, LO
论文数:
0
引用数:
0
h-index:
0
BAUER, LO
AUBUCHON, KG
论文数:
0
引用数:
0
h-index:
0
AUBUCHON, KG
MOYER, NE
论文数:
0
引用数:
0
h-index:
0
MOYER, NE
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(02)
: 165
-
&
[2]
CRAWFORD RH, 1972, ELECTRONICS, V45, P85
[3]
DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION
EDWARDS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
EDWARDS, JR
MARR, G
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
MARR, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
: 283
-
289
[4]
COMPARISON OF STATIC BULK-CHANNEL CHARGE-COUPLED DEVICE CHARACTERISTICS USING UNIFORM, GAUSSIAN AND MEASURED IMPURITY DISTRIBUTIONS
HAKEN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SOUTHAMPTON,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
UNIV SOUTHAMPTON,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
HAKEN, RA
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(09)
: 789
-
797
[5]
MODELING OF AN ION-IMPLANTED SILICON-GATE DEPLETION-MODE IGFET
HUANG, JST
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HUANG, JST
TAYLOR, GW
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
TAYLOR, GW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(11)
: 995
-
1001
[6]
CHARACTERISTICS OF A DEPLETION-TYPE IGFET
HUANG, JST
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HUANG, JST
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(05)
: 513
-
514
[7]
THRESHOLD SHIFT CALCULATIONS FOR ION IMPLANTED MOS DEVICES
MACPHERSON, MR
论文数:
0
引用数:
0
h-index:
0
MACPHERSON, MR
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(12)
: 1319
-
+
[8]
HIGH-PERFORMANCE N-CHANNEL MOS LSI USING DEPLETION-TYPE LOAD ELEMENTS
MASUHARA, T
论文数:
0
引用数:
0
h-index:
0
MASUHARA, T
NAGATA, M
论文数:
0
引用数:
0
h-index:
0
NAGATA, M
HASHIMOTO, N
论文数:
0
引用数:
0
h-index:
0
HASHIMOTO, N
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1972,
SC 7
(03)
: 224
-
+
[9]
MEASUREMENTS ON DEPLETION-MODE FIELD-EFFECT TRANSISTORS AND BURIED CHANNEL MOS CAPACITORS FOR CHARACTERIZATION OF BULK TRANSFER CHARGE-COUPLED-DEVICES
MOHSEN, AM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
MOHSEN, AM
MORRIS, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
MORRIS, FJ
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(05)
: 407
-
416
[10]
REDDI VGK, 1968, IEEE T ELECTRON DEV, VED15, P151
←
1
2
→