COMPARISON OF STATIC BULK-CHANNEL CHARGE-COUPLED DEVICE CHARACTERISTICS USING UNIFORM, GAUSSIAN AND MEASURED IMPURITY DISTRIBUTIONS

被引：6

作者：

HAKEN, RA ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 09期

关键词：

D O I：

10.1016/0038-1101(77)90007-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：789 / 797

页数：9

共 12 条

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[8] SIMPLE MODEL OF A BURIED CHANNEL CHARGE COUPLED DEVICE
LEES, AW
RYAN, WD
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (11) : 1163 - 1169
[9] DESIGN CONSIDERATIONS FOR A 2-PHASE, BURIED-CHANNEL, CHARGE-COUPLED DEVICE
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WALDEN, RH
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (08): : 1581 - 1597
[10] MEASUREMENTS ON DEPLETION-MODE FIELD-EFFECT TRANSISTORS AND BURIED CHANNEL MOS CAPACITORS FOR CHARACTERIZATION OF BULK TRANSFER CHARGE-COUPLED-DEVICES
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[J]. SOLID-STATE ELECTRONICS, 1975, 18 (05) : 407 - 416

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