MEASUREMENTS ON DEPLETION-MODE FIELD-EFFECT TRANSISTORS AND BURIED CHANNEL MOS CAPACITORS FOR CHARACTERIZATION OF BULK TRANSFER CHARGE-COUPLED-DEVICES

被引：30

作者：

MOHSEN, AM ^{[1
]}

MORRIS, FJ ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 05期

关键词：

D O I：

10.1016/0038-1101(75)90042-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：407 / 416

页数：10

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