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MODELING OF AN ION-IMPLANTED SILICON-GATE DEPLETION-MODE IGFET
被引:56
作者
:
HUANG, JST
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HUANG, JST
[
1
]
TAYLOR, GW
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
TAYLOR, GW
[
1
]
机构
:
[1]
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1975年
/ 22卷
/ 11期
关键词
:
D O I
:
10.1109/T-ED.1975.18259
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:995 / 1001
页数:7
相关论文
共 5 条
[1]
DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION
EDWARDS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
EDWARDS, JR
MARR, G
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
MARR, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
: 283
-
289
[2]
CHARACTERISTICS OF A DEPLETION-TYPE IGFET
HUANG, JST
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HUANG, JST
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(05)
: 513
-
514
[3]
HIGH-PERFORMANCE N-CHANNEL MOS LSI USING DEPLETION-TYPE LOAD ELEMENTS
MASUHARA, T
论文数:
0
引用数:
0
h-index:
0
MASUHARA, T
NAGATA, M
论文数:
0
引用数:
0
h-index:
0
NAGATA, M
HASHIMOTO, N
论文数:
0
引用数:
0
h-index:
0
HASHIMOTO, N
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1972,
SC 7
(03)
: 224
-
+
[4]
REDDI VGK, 1968, IEEE T ELECTRON DEV, VED15, P151
[5]
YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2
←
1
→
共 5 条
[1]
DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION
EDWARDS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
EDWARDS, JR
MARR, G
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
MARR, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
: 283
-
289
[2]
CHARACTERISTICS OF A DEPLETION-TYPE IGFET
HUANG, JST
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HUANG, JST
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(05)
: 513
-
514
[3]
HIGH-PERFORMANCE N-CHANNEL MOS LSI USING DEPLETION-TYPE LOAD ELEMENTS
MASUHARA, T
论文数:
0
引用数:
0
h-index:
0
MASUHARA, T
NAGATA, M
论文数:
0
引用数:
0
h-index:
0
NAGATA, M
HASHIMOTO, N
论文数:
0
引用数:
0
h-index:
0
HASHIMOTO, N
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1972,
SC 7
(03)
: 224
-
+
[4]
REDDI VGK, 1968, IEEE T ELECTRON DEV, VED15, P151
[5]
YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2
←
1
→