AN INVESTIGATION OF THE PROPERTIES OF AN EPITAXIAL SI LAYER ON A SUBSTRATE WITH A BURIED SIO2 LAYER FORMED BY OXYGEN-ION IMPLANTATION

被引：28

作者：

HOMMA, Y

OSHIMA, M

HAYASHI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 06期

关键词：

D O I：

10.1143/JJAP.21.890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：890 / 895

页数：6

共 13 条

[1] CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 325 - 327
[2] EARLY GROWTH OF SILICON ON SAPPHIRE .1. TRANSMISSION ELECTRON MICROSOPY
ABRAHAMS, MS
BUIOCCHI, CJ
SMITH, RT
CORBOY, JF
BLANC, J
CULLEN, GW
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5139 - 5150
[3] FORMATION OF ABRUPT INTERFACES BETWEEN SURFACE SILICON AND BURIED SIO2 LAYERS BY VERY HIGH-DOSE OXYGEN-ION IMPLANTATION
HAYASHI, T
OKAMOTO, H
HOMMA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : 1005 - 1006
[4] ELECTRON-MICROSCOPE STUDY OF INTRINSIC AND EXTRINSIC STACKING-FAULTS, AND TWINS IN SOS AT THE EARLY STAGE OF EPITAXIAL-GROWTH
HAYASHI, T
KUROSAWA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 426 - 434
[5] TEM, AES AND XPS STUDIES OF SI LAYER ON BURIED SIO2 LAYER FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION
HAYASHI, T
MAEYAMA, S
YOSHII, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : 1111 - 1116
[6] HAYASHI T, 1981, I PHYS C SER, V59, P533
[7] THE SOLUBILITY OF OXYGEN IN SILICON
HROSTOWSKI, HJ
KAISER, RH
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) : 214 - 216
[8] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON
IZUMI, K
DOKEN, M
ARIYOSHI, H
[J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594
[9] SURFACE SILICON CRYSTALLINITY AND ANOMALOUS COMPOSITION PROFILES OF BURIED SIO2 AND SI3N4 LAYERS FABRICATED BY OXYGEN AND NITROGEN IMPLANTATION IN SILICON
MAEYAMA, S
KAJIYAMA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05): : 744 - 751
[10] A HIGH-SPEED BURIED CHANNEL MOSFET ISOLATED BY AN IMPLANTED SILICON DIOXIDE LAYER
OHWADA, K
OMURA, Y
SANO, E
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1084 - 1087

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