SURFACE SILICON CRYSTALLINITY AND ANOMALOUS COMPOSITION PROFILES OF BURIED SIO2 AND SI3N4 LAYERS FABRICATED BY OXYGEN AND NITROGEN IMPLANTATION IN SILICON

被引：60

作者：

MAEYAMA, S

KAJIYAMA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 05期

关键词：

D O I：

10.1143/JJAP.21.744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：744 / 751

页数：8

共 17 条

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[4] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA
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[6] FORMATION OF ABRUPT INTERFACES BETWEEN SURFACE SILICON AND BURIED SIO2 LAYERS BY VERY HIGH-DOSE OXYGEN-ION IMPLANTATION
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[7] TEM, AES AND XPS STUDIES OF SI LAYER ON BURIED SIO2 LAYER FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : 1111 - 1116
[8] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON
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