NITROGEN-IMPLANTED SILICON .1. DAMAGE ANNEALING AND LATTICE LOCATION

被引：47

作者：

MITCHELL, JB

PRONKO, PP

SHEWCHUN, J

THOMPSON, DA

DAVIES, JA

机构：

[1] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON,ONTARIO,CANADA

[2] ATOM ENERGY CANADA LTD,CHALK RIVER NUCL LABS,SOLID STATE SCI BRANCH,CHALK RIVER,ONTARIO,CANADA

来源：

关键词：

D O I：

10.1063/1.321339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：332 / 334

页数：3

共 9 条

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[5] Pronko P. P., 1971, Radiation Effects, V10, P79, DOI 10.1080/00337577108231075
[6] LATTICE DISORDER STUDIES IN LOW-TEMPERATURE NITROGEN-IMPLANTED SILICON
PRONKO, PP
MITCHELL, JB
SHEWCHUN, J
DAVIES, JA
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1973, 20 (04): : 257 - 263
[7] ROUGHAN PE, 1968, J ELECTROCHEM SOC, V115, pC74
[8] SCHWUTTKE GH, 1968, RADIATION EFFECTS SE, P406
[9] ZORIN EI, 1968, SOV PHYS SEMICOND+, V2, P111