STUDY OF BURIED SILICON-NITRIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION

被引：50

作者：

BOURGUET, P

DUPART, JM

LETIRAN, E

AUVRAY, P

GUIVARCH, A

SALVI, M

PELOUS, G

HENOC, P

机构：

[1] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE

[2] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

关键词：

D O I：

10.1063/1.327649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6169 / 6175

页数：7

共 20 条

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[2] AUVRAY P, 1978, VIDE COUCHES MINCE S, V189, P243
[3] BAYERL P, 1979, 1978 P ION BEAM MOD, P1187
[4] BORDERS JA, 1971, 1971 P INT C ION IMP, P241
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WATELSKI, SB
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[7] EDELMAN FL, 1978, PHYS STATUS SOLIDI A, V50, P573, DOI 10.1002/pssa.2210500226
[8] STRUCTURE OF SILICON-NITRIDE FILMS .2. NONSTOICHIOMETRIC SILICON-NITRIDE
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (01): : 49 - 56
[9] FORMATION OF SIC AND SI-3N-4 IN SILICON BY ION-IMPLANTATION
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01): : 13 - 15
[10] STRUCTURE OF SILICON-NITRIDE FILMS .3. OXIDATION OF SILICON NITRIDE DEFECTS
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (02): : 375 - 381