STRUCTURE OF SILICON-NITRIDE FILMS .2. NONSTOICHIOMETRIC SILICON-NITRIDE

被引：15

作者：

EDELMAN, FL ^{[1
]}

ZAITSEV, BN ^{[1
]}

LATUTA, VZ ^{[1
]}

KHOROMENKO, AA ^{[1
]}

机构：

[1] NOVOSIBIRSK STATE UNIV,NOVOSIBIRSK,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 01期

关键词：

D O I：

10.1002/pssa.2210510104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The short‐range order is analysed in silicon nitride films obtained in a gas phase of the silane–ammonia mixture (from 1:50 to 5:1) and in the silane–ammonia–oxygen mixtures. It is shown that in the first case amorphous films are formed which are close in structure to the mixture of microclusters of silicon and silicon nitride at the silane–ammonia relation of 2:1 and 5:1, and in the second case, at any content of oxygen in silicon nitride (up to 45 to 48%), silicon is a structural base of films. The results of film crystallization in Si3N4(Si) and Si3N4(O) at high‐temperature annealing are discussed. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：49 / 56

页数：8

共 15 条

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