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PROPERTIES OF VAPOR-DEPOSITED SILICON-NITRIDE FILMS WITH VARYING EXCESS SI CONTENT
被引:16
作者
:
TANABASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD, IC DIV, NAKAHARA, KAWASAKI, JAPAN
NIPPON ELECT CO LTD, IC DIV, NAKAHARA, KAWASAKI, JAPAN
TANABASHI, K
[
1
]
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD, IC DIV, NAKAHARA, KAWASAKI, JAPAN
NIPPON ELECT CO LTD, IC DIV, NAKAHARA, KAWASAKI, JAPAN
KOBAYASHI, K
[
1
]
机构
:
[1]
NIPPON ELECT CO LTD, IC DIV, NAKAHARA, KAWASAKI, JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1973年
/ 12卷
/ 05期
关键词
:
D O I
:
10.1143/JJAP.12.641
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:641 / 646
页数:6
相关论文
共 11 条
[1]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
论文数:
0
引用数:
0
h-index:
0
BROWN, GA
ROBINETT.WC
论文数:
0
引用数:
0
h-index:
0
ROBINETT.WC
CARLSON, HG
论文数:
0
引用数:
0
h-index:
0
CARLSON, HG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
: 948
-
&
[2]
STRUCTURE AND SODIUM MIGRATION IN SILICON NITRIDE FILMS
DALTON, JV
论文数:
0
引用数:
0
h-index:
0
DALTON, JV
DROBEK, J
论文数:
0
引用数:
0
h-index:
0
DROBEK, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(08)
: 865
-
+
[3]
PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES
DOO, VY
论文数:
0
引用数:
0
h-index:
0
DOO, VY
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
NICHOLS, DR
论文数:
0
引用数:
0
h-index:
0
NICHOLS, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(01)
: 61
-
&
[4]
SILICON NITRIDE A NEW DIFFUSION MASK
DOO, VY
论文数:
0
引用数:
0
h-index:
0
DOO, VY
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(07)
: 561
-
&
[5]
CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES
FROHMANB.D
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor, Research and Development Laboratory, Palo Alto, CA 94304
FROHMANB.D
LENZLINGER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor, Research and Development Laboratory, Palo Alto, CA 94304
LENZLINGER, M
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(08)
: 3307
-
+
[6]
KOBAYASHI K, 1969, J ELECTROCHEM SOC JP, V37, P87
[7]
INFLUENCE OF DEVICE PARAMETERS ON MEMORY PERFORMANCE OF MNOS STRUCTURE
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1972,
11
(04)
: 555
-
+
[8]
ROSS EC, 1969, RCA REV, V30, P366
[9]
CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(07)
: 2951
-
+
[10]
VENSSON CS, 1971, P IEEE, V59, P1134
←
1
2
→
共 11 条
[1]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
论文数:
0
引用数:
0
h-index:
0
BROWN, GA
ROBINETT.WC
论文数:
0
引用数:
0
h-index:
0
ROBINETT.WC
CARLSON, HG
论文数:
0
引用数:
0
h-index:
0
CARLSON, HG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
: 948
-
&
[2]
STRUCTURE AND SODIUM MIGRATION IN SILICON NITRIDE FILMS
DALTON, JV
论文数:
0
引用数:
0
h-index:
0
DALTON, JV
DROBEK, J
论文数:
0
引用数:
0
h-index:
0
DROBEK, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(08)
: 865
-
+
[3]
PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES
DOO, VY
论文数:
0
引用数:
0
h-index:
0
DOO, VY
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
NICHOLS, DR
论文数:
0
引用数:
0
h-index:
0
NICHOLS, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(01)
: 61
-
&
[4]
SILICON NITRIDE A NEW DIFFUSION MASK
DOO, VY
论文数:
0
引用数:
0
h-index:
0
DOO, VY
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(07)
: 561
-
&
[5]
CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES
FROHMANB.D
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor, Research and Development Laboratory, Palo Alto, CA 94304
FROHMANB.D
LENZLINGER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor, Research and Development Laboratory, Palo Alto, CA 94304
LENZLINGER, M
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(08)
: 3307
-
+
[6]
KOBAYASHI K, 1969, J ELECTROCHEM SOC JP, V37, P87
[7]
INFLUENCE OF DEVICE PARAMETERS ON MEMORY PERFORMANCE OF MNOS STRUCTURE
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1972,
11
(04)
: 555
-
+
[8]
ROSS EC, 1969, RCA REV, V30, P366
[9]
CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(07)
: 2951
-
+
[10]
VENSSON CS, 1971, P IEEE, V59, P1134
←
1
2
→