FORMATION OF SIC AND SI-3N-4 IN SILICON BY ION-IMPLANTATION

被引：27

作者：

EDELMAN, FL ^{[1
]}

KUZNETSOV, ON ^{[1
]}

LEZHEIKO, LV ^{[1
]}

LUBOPYTOVA, EV ^{[1
]}

机构：

[1] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK,USSR

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1976年 / 29卷 / 01期

关键词：

D O I：

10.1080/00337577608233477

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：13 / 15

页数：3

共 8 条

[1] RELATIONS BETWEEN STRUCTURE AND OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SI AND GE FILMS
BRODSKY, MH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 125 - &
[2] Gerasimenko N. N., 1974, MIKROELEKTRONIKA, V3, P467
[3] Gorodetskii A. E., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P927
[4] GORODETSKII AE, 1968, FIZ TEKH POLUPROV, V2, P136
[5] PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
HU, SM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 693 - +
[6] INFRARED PROPERTIES OF HEXAGONAL SILICON CARBIDE
SPITZER, WG
KLEINMAN, D
WALSH, D
[J]. PHYSICAL REVIEW, 1959, 113 (01): : 127 - 132
[7] SPITZER WG, 1959, PHYS REV, V113, P373
[8] FORMATION OF SIO2 FILMS BY OXYGEN-ION BOMBARDMENT
WATANABE, M
TOOI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (08) : 737 - &