TEM, AES AND XPS STUDIES OF SI LAYER ON BURIED SIO2 LAYER FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION

被引：22

作者：

HAYASHI, T

MAEYAMA, S

YOSHII, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 06期

关键词：

D O I：

10.1143/JJAP.19.1111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1111 / 1116

页数：6

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