NATURE AND ANNEALING BEHAVIOR OF DISORDERS IN ION-IMPLANTED SILICON

[1] AITKEN D, 1976, 7TH P INT C EL ION B, P504

[2] ANTONENKO AK, 1976, SOV PHYS SEMICOND+, V10, P81

[3] ELECTRICAL ACTIVATION PROCESSES OF P+ IONS CHANNELED ALONG [110] AXIS OF SILICON - EFFECT OF ANNEALING ON CARRIERS PROFILES SHAPE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 26 (03): : 161 - 171

[4] ANNEALING OF DAMAGE PRODUCED BY COPPER-ION IMPLANTATION OF SILICON SINGLE-CRYSTALS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 23 (01): : 63 - 66

[5] CHADDERTON LT, 1965, RAD DAMAGE CRYSTALS

[6] CHERNOW F, 1977, ION IMPLANTATION SEM

[7] DOSE DEPENDENCE OF RESIDUAL LATTICE DISORDER IN ION-IMPLANTED AND ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 322 - 323

[8] Crowder Billy L., 1973, ION IMPLANTATION SEM

[9] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[10] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[1] AITKEN D, 1976, 7TH P INT C EL ION B, P504

[2] ANTONENKO AK, 1976, SOV PHYS SEMICOND+, V10, P81

[3] ELECTRICAL ACTIVATION PROCESSES OF P+ IONS CHANNELED ALONG [110] AXIS OF SILICON - EFFECT OF ANNEALING ON CARRIERS PROFILES SHAPE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 26 (03): : 161 - 171

[4] ANNEALING OF DAMAGE PRODUCED BY COPPER-ION IMPLANTATION OF SILICON SINGLE-CRYSTALS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 23 (01): : 63 - 66

[5] CHADDERTON LT, 1965, RAD DAMAGE CRYSTALS

[6] CHERNOW F, 1977, ION IMPLANTATION SEM

[7] DOSE DEPENDENCE OF RESIDUAL LATTICE DISORDER IN ION-IMPLANTED AND ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 322 - 323

[8] Crowder Billy L., 1973, ION IMPLANTATION SEM

[9] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[10] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93