ANNEALING OF DAMAGE PRODUCED BY COPPER-ION IMPLANTATION OF SILICON SINGLE-CRYSTALS

被引：6

作者：

CHADDERTON, LT

WHITTON, JL

机构：

[1] HC ORSTED INST, PHYS LAB 2, UNIVERSITETS PK 5, DK2100 COPENHAGEN, DENMARK

[2] ATOM ENERGY CANADA LTD, CHALK RIVER NUCL LABS, CHALK RIVER, ONTARIO, CANADA

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1974年 / 23卷 / 01期

关键词：

D O I：

10.1080/00337577408232047

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：63 / 66

页数：4

共 14 条

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[6]

Chadderton L. T., 1971, Radiation Effects, V8, P77, DOI 10.1080/00337577108231012

[7]

Chadderton L. T., 1971, Radiation Effects, V7, P129, DOI 10.1080/00337577108232573

[8] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

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[9] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J].

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[10] ENERGY DEPENDENCE OF LATTICE DISORDER IN ION-IMPLANTED SILICON [J].

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